NP55N03SUG
TYPICAL CHARACTERISTICS (T A = 25 ° C)
120
100
80
60
40
20
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
80
70
60
50
40
30
20
10
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
1000
T C - Case Temperature - ° C
FORWARD BIAS SAFE OPERATING AREA
T C - Case Temperature - ° C
=1
100
I D(DC)
I D(pulse)
PW
i 0
0
μ s
DC
R DS(on) Limited
10
V GS = 10 V
1
T C = 25 ° C
0.1
Single pulse
0.1
1
10
100
V DS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
1
R th(ch-A) = 125 ° C/W i
R th(ch-C) = 1.95 ° C/W i
Single pulse
0.1
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18320EJ2V0DS
3
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相关代理商/技术参数
NP55N04SLG 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP55N04SLG-E1-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP55N04SLG-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP55N04SUG 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
NP55N04SUG-E1-AY 功能描述:MOSFET N-CH 40V 55A TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP55N04SUG-E1-AY/K 制造商:Renesas Electronics Corporation 功能描述:
NP55N04SUG-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:
NP55N04SUG-E2 制造商:Renesas Electronics Corporation 功能描述: